Glucose-derived carbon materials with tailored properties as electrocatalysts for the oxygen reduction reaction

• Rafael Gomes Morais,
• Natalia Rey-Raap,
• José Luís Figueiredo and
• Manuel Fernando Ribeiro Pereira

Beilstein J. Nanotechnol. 2019, 10, 1089–1102, doi:10.3762/bjnano.10.109

• effect, as the number of electrons exchanged during the oxygen reduction reaction stays at approximately three electrons, demonstrating that nitrogen incorporation helps to stabilize the number of electrons for a larger potential range. The conventionally doped sample (N-AGC) shows the same pattern as

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• system. The most common nitrogen doping techniques and how the doping activates the surface are described, and the spectroscopic differences regarding the nitrogen incorporation in graphene and CNTs are discussed. Review Heteroatom-doped carbon nanostructures Carbon nanotubes and graphene share many

• atoms. The nitrogen incorporation in graphene and the consequent changes of the spectroscopic signature are slightly different compared to CNTs. The curvature of the nanotubes (more accentuated for SWNTs) causes a partial rehybridization of the carbon orbitals deviating from a pure planar sp2

• -configuration. Some sp3-contributions can be thus detected, also due to presence of pentagons and intrinsic defects on the tips [100]. Under similar doping conditions the amount of pyrrolic nitrogen is therefore higher in CNTs than in graphene [85]. Furthermore, the nitrogen incorporation in graphene is

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• edges [13]. Finally, we turn to the problem of nitrogen incorporation into graphene. Nitrogen can be incorporated into graphene sheet (i) in situ, using ammonia as a component of the gas carrier mixture [43] or with nitrogen containing precursors [60][61] and (ii) by post-treatment, e.g., by treatment

• possesses one of the strongest bonds with an energy of 226 kcal/mol, which means that the temperature of the CVD process is not enough to decompose a significant amount of nitrogen molecules into atoms. The authors of the work [64] did not explore the mechanism of nitrogen incorporation. We believe that in

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• structure of the catalyst nanoparticles and/or of the nanotube themselves. Nevidomskyy et al. reported in their ab-initio studies that nitrogen incorporation into SWCNTs could cause the formation of covalent junctions between neighbouring tubes if the nitrogen atoms were opposed to each other [57

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• di Catania - Università degli Studi di Catania, Via Valdisavoia 9, 95123, Catania, Italy STMicroelectronics, Stadale Primosole 50, 95121, Catania, Italy 10.3762/bjnano.4.26 Abstract The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal

• : 4H-SiC; metal/oxide/semiconductor; nitrogen incorporation; Introduction The SiO2/4H-SiC interface is the main building block of SiC-based MOSFET devices and its electrostructural quality typically has a direct impact on the device performance in power-electronics applications. In particular

• electrical activation of the incorporated nitrogen and on the depth extension of the nitrogen profile is still lacking. Moreover, the role of the 4H-SiC surface morphology and in particular of the crystallographic planes exposed at the SiO2/4H-SiC interface on the nitrogen incorporation have to be clarified